Method of preventing cathode of active matrix organic light...

Details Method of preventing cathode of active matrix organic light... Method of preventing cathode of active matrix organic light...

2006-03-28

2006-03-28

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S029000, C438S149000

Reexamination Certificate

active

07018860

ABSTRACT:
A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a drain terminal. A passivation layer is formed over the substrate and then the passivation layer is planarized. Thereafter, an opening that exposes the drain terminal is formed in the passivation layer. An anode layer is formed over the passivation layer and the interior of a portion of the opening so that the drain terminal and the anode layer are electrically connected. A light-emitting layer and a cathode layer are sequentially formed over the substrate to form an active matrix organic light emitting device.

REFERENCES:
patent: 5528099 (1996-06-01), Xie et al.
patent: 6072450 (2000-06-01), Yamada et al.
patent: 6191433 (2001-02-01), Roitman et al.
patent: 6356032 (2002-03-01), Suzuki et al.

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