Process of manufacturing semiconductor device including...

Details Process of manufacturing semiconductor device including... Process of manufacturing semiconductor device including...

2006-05-30

2006-05-30

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S633000, C438S693000, C438S690000, C438S691000

Reexamination Certificate

active

07052995

ABSTRACT:
A buried film and a barrier film are polished together using a slurry in which the polishing rate on a substrate material (in particular, silicon oxide), that on a buried-film material (in particular, tungsten) and that on a barrier-film material (in particular, titanium oxide) are substantially equal to one another. This can materialize a buried structure free from any step or steps, at a high polishing rate.

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Chinese Office Action for corresponding Chinese Application No. 02140212.4, dated Apr. 30, 2004, with English-language equivalent.

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