Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-05-23
2006-05-23
Lebentritt, Michael (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S014000, C438S011000, C257S758000
Reexamination Certificate
active
07049700
ABSTRACT:
A method for fabricating semiconductor components is performed using a laser scanner and a laser imaging process. A substrate, such as a semiconductor wafer, containing multiple semiconductor components, such as dice or packages, is provided. The components include integrated circuits, and component contacts in electrical communication with the integrated circuits. Initially, the components are tested to identify and locate good components and defective components on the substrate. Using data from the testing step and the laser scanner, patterns of conductors are then formed to either repair the defective components, to electrically isolate the defective components for burn-in, or to form component clusters containing only the good components. Alternately, using data from the testing step and the laser scanner, a matching test board can be fabricated, and used to electrically engage the good components, while the defective components remain isolated.
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Hembree David R.
Wood Alan G.
Gratton Stephen A.
Lebentritt Michael
Lindsay Jr. Walter L.
Micro)n Technology, Inc.
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