Semiconductor memory device and portable electronic...

Details Semiconductor memory device and portable electronic... Semiconductor memory device and portable electronic...

2006-08-15

2006-08-15

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185190

Reexamination Certificate

active

07092295

ABSTRACT:
A semiconductor memory device includes a controller programming a nonvolatile memory cell by applying a first pulse so that a charge amount smaller than a target charge amount is accumulated in the nonvolatile memory cell, a second pulse train so that a second charge amount smaller than the target charge amount and larger than the first charge amount is accumulated in the nonvolatile memory cell, and a third pulse train so that a third charge amount falling within an allowable error range of the target charge amount is accumulated. The semiconductor memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and memory functional units formed on both sides of the gate electrode.

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