Electrostatic capacitance detecting device

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters

Reexamination Certificate

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C324S658000, C324S686000

Reexamination Certificate

active

07078917

ABSTRACT:
The invention provides an electrostatic capacitance detection device. The electrostatic capacitance detection device can be formed of M individual power supply lines, N individual output lines, arranged in a matrix of M rows×N columns, and electrostatic capacitance detection elements provided on the crossing points of the individual power supply lines and the individual output lines, each of the electrostatic capacitance detection elements is formed of a signal detection element and a signal amplification element, the signal detection element is formed of a capacitance detecting electrode and a capacitance detecting dielectric layer, the signal amplification element formed of a metal-insulator-semiconductor (MIS) type thin film semiconductor device for signal amplification, including a gate electrode, a gate insulating layer and a semiconductor layer.

REFERENCES:
patent: 6049620 (2000-04-01), Dickinson et al.
patent: 6411727 (2002-06-01), Harkin
patent: 6657269 (2003-12-01), Migliorato et al.
patent: 1268719 (2000-10-01), None
patent: 1 041 356 (2000-10-01), None
patent: A 11-118415 (1999-04-01), None
patent: A 2000-346608 (2000-12-01), None
patent: A 2000-346610 (2000-12-01), None
patent: A 2001-56204 (2001-02-01), None
patent: A 2001-133213 (2001-05-01), None
patent: A 2003-254706 (2003-09-01), None
patent: A 2004-089675 (2004-03-01), None
patent: A 2004-102511 (2004-04-01), None
patent: WO 01/06448 (2001-01-01), None
Hashido, Ryuichi et al., “A Capacitive Fingerprint Sensor Chip Using Low-Temperature Poly-Si TFTs on a Glass Substrate and a Novel and Unique Sensing Method,” IEEE Journal of Solid-State Circuits, IEEE Inc., New York, U.S. vol. 38, No. 2, Feb. 2003, pp. 274-280.
Inglis, C. et al., “A Robust, 1.8V 250μ W Direct-Contact 500dpi Fingerprint Sensor”, Solid-State Circuits Conference, 1998, Digest of Technical Papers. 1998 IEEE Intl. San Francisco, CA, USA Feb. 5-7, 1998, pp. 284-285.

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