Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-07-18
2006-07-18
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S387000, C438S459000, C361S301400
Reexamination Certificate
active
07078311
ABSTRACT:
There is provided a capacitor embedded in a substrate having a small thickness and requiring only a small space for short connection lines. The substrate-embedded capacitor comprises a substrate having an opening, a first conductive layer on the substrate, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and an insulating layer formed on the second conductive layer and having an opening. In the substrate-embedded capacitor, the first conductive layer and the second conductive layer are exposed through the openings in the substrate and the insulating layer, respectively.
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Higashi Mitsutoshi
Koike Hiroko
Sakaguchi Hideaki
Ladas & Parry LLP
Perkins Pamela
Shinko Electric Industries Co. Ltd.
Smith Zandra V.
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