Method of etching cavities having different aspect ratios

Details Method of etching cavities having different aspect ratios Method of etching cavities having different aspect ratios

2006-05-16

2006-05-16

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

C438S424000, C438S301000, C438S053000, C438S052000, C438S202000, C438S781000, C438S671000

Reexamination Certificate

active

07045463

ABSTRACT:
A method of etching cavities having different aspect ratios. An etching stop layer is formed on the bottom surface of a substrate, and a mask pattern is formed on the top surface of the substrate. The mask pattern includes a plurality of sacrificial patterns positioned on both a first cavity predetermined region and a second cavity predetermined region. Then, an etching process is performed to remove the substrate not covered by the mask layer. Then, the etching stop layer is removed, as well as the sacrificial patterns and the substrate covered by the sacrificial patterns.

REFERENCES:
patent: 2002/0045136 (2002-04-01), Fritze et al.
patent: 2002/0127760 (2002-09-01), Yeh et al.
patent: 2003/0066816 (2003-04-01), Schultz et al.
patent: 2004/0087054 (2004-05-01), Chinn et al.
patent: 2005/0054153 (2005-03-01), Asami et al.

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