Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-03-28
2006-03-28
Vannucci, James (Department: 2828)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S681000, C430S030000
Reexamination Certificate
active
07018932
ABSTRACT:
A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
REFERENCES:
patent: 6002467 (1999-12-01), Nishi et al.
patent: 6191397 (2001-02-01), Hayasaki et al.
patent: 6376139 (2002-04-01), Fujisawa et al.
patent: RE38113 (2003-05-01), Nishi et al.
patent: 6696363 (2004-02-01), Lee et al.
patent: 2000-299271 (2000-10-01), None
patent: 2001-244176 (2001-09-01), None
Hayasaki, K. et al., “Pattern Forming Method Using Photolithography”, U.S. Appl. No. 09/893,485, filed on Jun. 29, 2001.
Higashiki Tatsuhiko
Inoue Soichi
Ito Shin'ichi
Kawano Kenji
Okumura Katsuya
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Vannucci James
LandOfFree
Method for manufacturing a semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3603653