Method for fabricating semiconductor device with fine pattern

Details Method for fabricating semiconductor device with fine pattern Method for fabricating semiconductor device with fine pattern

2006-07-11

2006-07-11

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S618000, C438S637000, C438S610000

Reexamination Certificate

active

07074722

ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device with a fine pattern. The method includes the steps of: (a) forming a semiconductor substrate structure including a substrate, a nitride layer for forming a hard mask, a plurality of conductive patterns, an etch stop layer, an inter-layer insulation layer, an anti-reflective coating (ARC) layer and a photoresist pattern; (b) selectively etching the ARC layer and the nitride layer with use of the photoresist pattern as an etch mask to form a hard mask; (c) removing the photoresist pattern and the ARC layer; (d) etching the inter-layer insulation layer disposed between the conductive patterns by using the hard mask as an etch mask to form a contact hole exposing the etch stop layer; (e) removing the etch stop layer formed at a bottom area of the contact hole to expose the substrate; and (f) forming a plug electrically contacted to the exposed substrate, wherein the steps (b) and (d) to (e) proceeds in an in situ condition.

REFERENCES:
patent: 6265296 (2001-07-01), Yen et al.
patent: 6475906 (2002-11-01), Lee
patent: 2003/0066545 (2003-04-01), Chang et al.
patent: 2004/0038546 (2004-02-01), Ko
patent: 2005/0090055 (2005-04-01), Lee et al.
patent: 1020000014605 (2000-03-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device with fine pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device with fine pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device with fine pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3602127