Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-03-07
2006-03-07
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S048000, C257S072000
Reexamination Certificate
active
07009202
ABSTRACT:
A plurality of gate lines and a plurality of data lines intersecting the gate lines to define a display area are formed on an insulating substrate including a display area and a surrounding area. On the surrounding area, a gate driving circuit connected to the gate lines and a logic circuit for VI interposed between the gate driving circuit and the gate line and having several first to third NOR gates are formed. A first input terminal of the first NOR gate of the logic circuit for VI is connected to an output terminal of the gate driving circuit, and a second input terminal thereof is connected to a CON1terminal, and an output terminal thereof is connected to a first input terminal of the second or the third NOR gate. A second input terminal of the second NOR gate is connected to a CON2terminal and an output terminal thereof is connected to the gate lines in odd number. A second input terminal of the NOR gate is connected to a CON3terminal and an output terminal thereof is connected to the gate lines in even number.
REFERENCES:
patent: 6618100 (2003-09-01), Oike et al.
patent: 6624857 (2003-09-01), Nagata et al.
Jang Yong-Kyu
Jeon Jin
Lee Won-Kyu
Cantor & Colburn LLP
Nguyen Tuan H.
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