Method for producing a semiconductor layer of SiC of the 3C-poly

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438931, H01L 2130, H01L 2146

Patent

active

057982937

ABSTRACT:
In a method for producing a semiconductor layer (8) of SiC of the 3C-polytype on top of a semiconductor substrate layer (6) the wafer-bonding technique is utilised. Two amorphous layers are placed face to face and bonded by heating them, and the piece so obtained is annealed at such a high temperature that the material of the amorphous layers is allowed to flow for relaxing a 3C-SiC-layer (4) on top thereof. A second layer (8) of 3C-SiC is after that epitaxially regrown on top of said relaxed 3C-SiC-layer.

REFERENCES:
patent: 4983538 (1991-01-01), Gotou
patent: 5349207 (1994-09-01), Malhi
patent: 5455202 (1995-10-01), Malloy et al.
patent: 5466631 (1995-11-01), Ichikawa et al.
patent: 5654208 (1997-08-01), Harris et al.
patent: 5674765 (1997-10-01), Rottner et al.
Cioccio et al., Silicon carbide on insulator formation using the smart cut process, Electronics Letters, 1996, vol. 32, No. 12, pp. 1144-1145.
Tong et al., Silicon Carbide Wafer Bonding, J. Electrochem. Society, 1995, vol. 142, No. 1, pp. 232-236.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for producing a semiconductor layer of SiC of the 3C-poly does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor layer of SiC of the 3C-poly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor layer of SiC of the 3C-poly will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-36014

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.