Radiation-emitting semiconductor component

Details Radiation-emitting semiconductor component Radiation-emitting semiconductor component

2006-05-09

2006-05-09

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S086000, C257S102000, C257S103000

Reexamination Certificate

active

07042013

ABSTRACT:
A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.

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Winterhoff, R., “Kurzwellige GanIP-Quantenfilmlaser: Epitaxie und Charakterisierung”, Shaker Verlag GmbH, Aachen 1999, ISBN 3-82654958-9 pp. 96-99.

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