Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-03-21
2006-03-21
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S347000, C257S353000
Reexamination Certificate
active
07015502
ABSTRACT:
The present invention is for providing a sophisticated active matrix type organic semiconductor device. A first electrode102is formed on an insulated surface. A second insulated film104is formed on the first electrode102via a first insulated film103.An organic semiconductor film is formed on an opening part formed on the second insulated film104and the second insulated film104.An organic semiconductor film105is obtained by polishing the same until the second insulated film104is exposed. Furthermore, by forming a second electrode106and a third electrode107on the organic semiconductor film105,an organic semiconductor device of the present invention can be obtained.
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European Search Report (Application No. 02011882.4) dated Aug. 24, 2005.
Arai Yasuyuki
Shibata Noriko
Costellia Jeffrey L.
Nixon & Peabody LLP
Richards N. Drew
Semiconductor Energy Laboratory Co,. Ltd.
Thomas Tom
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