Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-01-31
2006-01-31
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S751000
Reexamination Certificate
active
06992390
ABSTRACT:
An interconnection structure for semiconductor integrated circuits is disclosed. The interconnection structure comprises a redundant layer, and at least one adhesion/diffusion barrier layer. The redundant layer comprises a metal or metal alloy selected from Ta, Mo, W, Be, Cr, Co, Ir, Ni, Nb, Os, Pd, Pt, Rb, Rh, Ru, and Th.
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Edelstein Daniel C.
Li Baozhen
Sullivan Timothy D.
Connolly Bove & Lodge & Hutz LLP
Fenty Jesse A.
International Business Machines Corp.
Jackson Jerome
Trepp Robert M.
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