Semiconductor light emitting devices including current...

Details Semiconductor light emitting devices including current... Semiconductor light emitting devices including current...

2006-04-11

2006-04-11

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S101000, C257S102000, C257S103000, C257S918000

Reexamination Certificate

active

07026653

ABSTRACT:
III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either the n-type region or the p-type region or both, to provide current spreading.

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D. A. Vanderwater et al., “High-Brightness AlGaInP Light Emitting Diodes”, Proceedings of the IEEE, vol. 85, No. 11, Nov. 1997, pp. 1752-1764.

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