Magnetoresistive semiconductor pressure sensors and...

Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system

Reexamination Certificate

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Reexamination Certificate

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07077010

ABSTRACT:
The present invention is directed to a method of sensing pressure in which applied pressure causes a change in the magnetization vector of a magnetoresistive layer within the device and a corresponding change in resistance. The method includes providing a sensing device with a sensor including plurality of layers, the plurality of layers comprising a non magnetic conducting layer disposed between a magnetoresistive layer with non-zero magnetostriction and a ferromagnetic biasing layer. Once provided, the method then includes sensing a resistance in the plurality of layers upon application of pressure to the sensing device, the applied pressure causing the magnetization vector of the magnetoresistive layer to change and thereby result in a change in resistance.

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