Non-volatile semiconductor memory and driving method

Details Non-volatile semiconductor memory and driving method Non-volatile semiconductor memory and driving method

2006-04-18

2006-04-18

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185290, C365S185240, C365S185210, C365S185170

Reexamination Certificate

active

07031192

ABSTRACT:
A data control unit is used to proved program, erase and verify signals to a non-volatile metal-oxide3-nitride-oxide-semiconductor (MONOS) memory. The data control unit comprises a plurality of sub-units that each contains a sense amplifier, two bi-directional flip-flop latches coupled in series and a program, erase and verify circuit. The two flip-flop latches each perform a task as a master latch or a slave latch depending on the memory operation. The program, erase and verify circuit in each sub-unit are connected together in a serial fashion such that multiple verification results are accumulated into one final result. Control signals are exchanged between a chip control unit and the data control unit to perform specified memory operations.

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