SOI sense amplifier with cross-coupled bit line structure

Details SOI sense amplifier with cross-coupled bit line structure SOI sense amplifier with cross-coupled bit line structure

2006-05-16

2006-05-16

Tra, Quan (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

Reexamination Certificate

active

07046045

ABSTRACT:
Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.

REFERENCES:
patent: 4843264 (1989-06-01), Galbraith
patent: 5407850 (1995-04-01), Doyle et al.
patent: 5854562 (1998-12-01), Toyoshima et al.
patent: 6008673 (1999-12-01), Glass et al.
patent: 6222394 (2001-04-01), Allen et al.
patent: 6433589 (2002-08-01), Lee
patent: 6480037 (2002-11-01), Song et al.
patent: 6833737 (2004-12-01), Aipperspach

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