Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-09-12
2006-09-12
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S048000, C257S401000, C257S496000, C257S734000, C257S758000, C257S798000
Reexamination Certificate
active
07105927
ABSTRACT:
Disclosed herein is a dummy pattern structure of a semiconductor device. The dummy pattern structure may include daughter dummy patterns respectively formed at places corresponding to vertexes of polygons in regions where metal wirings are not formed in an interlayer insulating film where metal wirings are formed, thus being arranged in the whole region while constituting a polygon shape, and mother dummy patterns respectively formed at places corresponding to the middles of the polygon, which is formed by the daughter dummy patterns. Generation of metal residues in a region where metal wirings are not formed when the metal wirings are formed by means of a damascene process are prevented. Also, a delamination phenomenon that interlayer insulating films are fallen apart can be prevented.
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Magnachip Semiconductor Ltd.
Soward Ida M.
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