Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-07-18
2006-07-18
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S749000, C438S022000
Reexamination Certificate
active
07078737
ABSTRACT:
An InGaN-based light-emitting diode that emits light in blue, for example, is mounted on a support substrate as a semiconductor light-emitting element, and a transparent film is fixed to the support substrate so as to cover the semiconductor light-emitting element. An electrode pattern is formed on an upper surface of the transparent film, and the electrode pattern is electrically connected to terminal electrodes of the semiconductor light-emitting element through, for example, through-holes. The transparent film can contain a phosphor excited by light emitted from the semiconductor light-emitting element. It is not necessary to perform wire bonding for connecting the semiconductor light-emitting element to the electrode pattern and sealing with a sealant.
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Ueda Daisuke
Yuri Masaaki
Baumeister B. William
Farahani Dana
Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
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