Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-03-14
2006-03-14
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S082000, C257S083000
Reexamination Certificate
active
07012278
ABSTRACT:
The object of the invention is to simultaneously achieve a reduction in the off current of a switching thin-film transistor and an increase in the on current of a current thin-film transistor in a current-drive thin-film transistor display apparatus.To achieve this object, the switching thin-film transistor is formed as a transistor of LDD structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of LDD structure or offset structure, and the LDD length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.
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Kiguchi Hiroshi
Kimura Mutsumi
Le Thao P.
Oliff & Berridg,e PLC
Seiko Epson Corporation
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