Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-07-04
2006-07-04
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S096000, C257S103000
Reexamination Certificate
active
07071495
ABSTRACT:
A III group nitride system compound semiconductor light emitting element has: a transparent substrate that is of a material except for III group nitride system compound semiconductor; a convex light trapping member that is formed directly or through a buffer layer on the surface of the transparent substrate; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The light trapping member has a refractive index substantially equal to that of the transparent substrate or closer to that of the transparent substrate than that of the III group nitride system compound semiconductor layer.
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Kazuyuki Tadatomo, et al., “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys. vol. 40 (2001), pp. L583-L585, Part 2, No. 6B, Jun. 15, 2001.
Jackson Jerome
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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