Thin-film magnetic head with tunnel magnetoresistive effect...

Details Thin-film magnetic head with tunnel magnetoresistive effect... Thin-film magnetic head with tunnel magnetoresistive effect...

2006-09-05

2006-09-05

Heinz, A. J. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07102859

ABSTRACT:
A thin-film magnetic head includes a TMR element and a resistor element connected in parallel with the TMR element. A resistance value RTMRof the TMR element itself is RTMR≧240 Ω, a product RA of the resistance value of the TMR element itself and a cross-sectional area of the TMR element is RA≧3 Ω·μm2, and a resistance value RPARAof the resistor element is RPARA≦480Ω.

REFERENCES:
patent: 2004/0264067 (2004-12-01), Lin et al.
patent: 10-233011 (1998-09-01), None
patent: 2002-217471 (2002-08-01), None

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