Metal treatment – Process of modifying or maintaining internal physical... – Carburizing or nitriding using externally supplied carbon or...
Patent
1994-06-24
1995-05-30
Kastler, Scott
Metal treatment
Process of modifying or maintaining internal physical...
Carburizing or nitriding using externally supplied carbon or...
148238, 420528, C22C 2100
Patent
active
054197872
ABSTRACT:
An insulating film with low thermal expansion characteristics is formed by depositing aluminum alloy materials in thin film form without the use of high temperatures and which can then be oxidized to create an insulating film which has low stress. A mixture of aluminum and magnesium oxides, known as spinel, has the proportions which are approximately correct for zero expansion when crystallization results from the oxidation.
REFERENCES:
patent: 1224362 (1917-05-01), Cooper
patent: 2018143 (1935-10-01), McCarty et al.
patent: 2066912 (1937-01-01), Ruben
patent: 2087269 (1937-07-01), Stroup
patent: 2190290 (1940-02-01), Kirsebom
patent: 3551143 (1970-12-01), Marukawa et al.
patent: 3825442 (1974-07-01), Moore
patent: 3839084 (1974-10-01), Cho et al.
patent: 3856647 (1974-12-01), Blachman
patent: 3949275 (1976-04-01), Muenz
patent: 3962485 (1976-06-01), Anderson et al.
patent: 3997339 (1976-12-01), Fickelscher
patent: 4056457 (1977-11-01), Vossen, Jr.
patent: 4731132 (1988-03-01), Alexander
patent: 4851192 (1989-07-01), Baba et al.
patent: 5352917 (1994-10-01), Ohmi
Kudela et al., "Study of Nitridation Process of Aluminum-Magnesium Alloys", Kovove Materialy, pp. 724-736, Dec. 1979 Cl. 148/238.
Auton William G.
Erlich Jacob N.
Kastler Scott
The United States of America as represented by the Secretary of
LandOfFree
Stress reduced insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stress reduced insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stress reduced insulator will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-359045