Semiconductor stacked die devices and methods of forming...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

Reexamination Certificate

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C257S686000, C257S777000, C257SE23001, C438S107000, C438S109000

Reexamination Certificate

active

07078790

ABSTRACT:
Semiconductor devices and methods of forming semiconductor devices are described. In one embodiment, at least one conductive structure is formed within a plurality of semiconductor substrates. At least portions of one of the conductive structures have oppositely facing, exposed outer surfaces. Individual substrates are stacked together in a die stack such that individual conductive structures on each substrate are in electrical contact with the conductive structures on a next adjacent substrate. In a preferred embodiment, the conductive structures comprise multi-layered, conductive pad structures.

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