Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2006-01-10
2006-01-10
Tugbang, A. Dexter (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603130, C029S603230, C427S131000
Reexamination Certificate
active
06983530
ABSTRACT:
A dual GMR or dual spin valve sensor has a self-pinned layer which has its magnetic moment pinned perpendicular to an air bearing surface by sense current fields from conductive layers in the dual spin valve sensor when a sense current is conducted therethrough. This scheme eliminates one of the antiferromagnetic pinning layers which is typically employed in a dual GMR or dual spin valve sensor. The self-pinned layer is thin so that its demagnetization field will not be greater than the sense current fields acting thereon. Because of the thinning of the self-pinned layer the spin valve effect of the spin valve sensor is degraded by scattering of conduction electrons at the boundary of the self-pinned layer. In order to overcome this problem a specular reflector layer is employed in contact with the self-pinned layer for reflecting the conduction electrons back into a mean free path of conduction electrons so that the spin valve effect on the self-pinned layer side of the spin valve sensor can be added to another spin valve effect on the other side of the free layer structure for providing a double spin valve effect with an improved read gap, as compared to prior art dual spin valve sensors.
REFERENCES:
patent: 5974657 (1999-11-01), Fox et al.
Kanai et al., “Spin-Valves with Bias Compensation Layer”, IEEE Transactions on Magnetics, vol. 34, No. 4, Jul. 1998, pp. 1498-1500.
Feece Ronald B.
Martin Robert B.
Nunnelley Lewis L.
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