Extreme UV radiation source and semiconductor exposure device

Details Extreme UV radiation source and semiconductor exposure device Extreme UV radiation source and semiconductor exposure device

2006-01-10

2006-01-10

Dinh, Trinh Vo (Department: 2821)

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

C315S111210, C250S50400H

Reexamination Certificate

active

06984941

ABSTRACT:
A usable 13.5 nm radiation source in which Sn is the radiation substance, in which rapid transport with good reproducibility is possible up to the plasma generation site and in which formation of detrimental “debris” and coagulation of the vapor are suppressed as much as possible is achieved using emission of Sn ions in that SnH4is supplied continuously or intermittently to the heating/ excitation part, is subjected to discharge heating and excitation or laser irradiation heating and excitation, and thus, is converted into a plasma from which extreme UV light with a main wavelength of 13.5 nm is emitted.

REFERENCES:
patent: 2004/0149937 (2004-08-01), Hiramoto
patent: 2005/0016462 (2005-01-01), Yamazaki
Choi et al., “Detailed space-resolved characterization of a laser-plasma soft-x-ray source at 13.5-nm wavelength with tin and its oxides”, J. Opt. Soc. Am. B/ vol. 17, No. 9, Sep. 2000, pp. 1616-1625.
Toshihisa Tomie, “Laser Produced Plasma Light Sources Present Status of Laser Produced Plasma EUV Sources Development”, J. Plasma Fusion Res. vol. 79, No. 3 (2003) pp. 234-239.

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