Photovoltaic device and manufacturing method therefor

Details Photovoltaic device and manufacturing method therefor Photovoltaic device and manufacturing method therefor

1993-03-24

1995-05-30

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136249, 437 4, 437100, 437108, 437109, 257458, H01L 31075, H01L 3120

Patent

active

054197830

ABSTRACT:
A photovoltaic device has a transparent substrate, a transparent electrode layer, a photovoltaic layer, and a back electrode which are stacked in this order. The photovoltaic layer has a p-type a-SiC layer provided on the transparent electrode layer, a buffer layer provided on the p-type a-SiC layer, a photosensitive layer provided on the buffer layer, and an n-type semiconductor layer provided on the photosensitive layer. The buffer layer is an a-SiC layer first deposited on the p-type a-SiC layer and then subjected to a plasma treatment. The plasma treatment should be carried out using a gas selected from a group consisting of hydrogen (H.sub.2), Argon (Ar), Helium (He), Neon (Ne), Krypton (Kr), and Xenon (Xe). In the device, the buffer layer may be composed of a microcrystalline SiC layer or an amorphous SiC layer. The buffer layer may have a thickness ranging from about 10 .ANG. to about 100 .ANG., and may be formed by a plasma-CVD process.

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"Structural and Electronic Properties of Silicon-Based Alloys", W. Beyer, Journal of Non-Crystalline Solids, 97&98 (1987), North-Holland, Amsterdam, pp. 1027-1034.
"Preparation of Highly Photoconductive Hydrogenated Amorphous Silicon Carbide Films with a Multiplasma-Zone Apparatus", A. Asano, T. Ichimura and H. Sakai, J. Appl. Phys., 65(6), Mar. 15, 1989, pp. 2439-2444.
"A Study on the Surface Reaction in the Growth of Amorphous Silicon by Intermittent Deposition Method", T. Ishimura, Y. Okayasu, H. Yamamoto, K. Fukuki, Twentieth IEEE Photovoltaic Specialists Conference-1988, vol. 1, pp. 114-118.

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