Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-03-21
2006-03-21
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010, C372S043010
Reexamination Certificate
active
07016385
ABSTRACT:
A semiconductor laser device has a current injection region (A) and current non-injection regions (B) located closer to respective laser beam-emitting end faces than the current injection region is. The semiconductor laser device has an oxide layer (106A) formed at a surface of a p-type (AlpHa1-p)qIn1-qP (0≦p≦x, 0≦q≦1) intermediate band gap layer (106) in each of the current non-injection regions (B), a p-type GaAs cap layer (107) formed on the intermediate band gap layer (106) in the current injection region (A), and a p-type GaAs contact layer (125) formed on the oxide layer (106A) and the p-type GaAs cap layer (107).
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Flores-Ruiz Delma R.
Harvey Minsun Oh
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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