Solid-state imaging device and method of manufacturing the same

Details Solid-state imaging device and method of manufacturing the same Solid-state imaging device and method of manufacturing the same

2006-04-18

2006-04-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S186000, C257S187000, C257S192000, C257S201000, C257S292000, C257S461000

Reexamination Certificate

active

07030427

ABSTRACT:
The invention provides a solid-state imaging device that can include a pixel array having a plurality of pixels arranged in a matrix. The pixels can each include a photo diode that generates carriers depending on the intensity of incident light, an accumulation region that accumulates the generated carriers, an insulated-gate output transistor that outputs a signal according to threshold voltage that changes depending on the number of carriers accumulated in the accumulation region, and an insulated-gate clear transistor that discharges carriers accumulated in the accumulation region. The carriers accumulated in the accumulation region are discharged through a channel region of the clear transistor. Accordingly, the invention can provide a technique where carriers in an accumulation region can be easily discharged.

REFERENCES:
patent: 6051857 (2000-04-01), Miida
patent: 6781178 (2004-08-01), Shizukuishi
patent: 02-180071 (1990-07-01), None
patent: A 11-195778 (1999-07-01), None
patent: 2001-298662 (2001-10-01), None
patent: 2002-16242 (2002-01-01), None
patent: 2002-353431 (2002-12-01), None

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