Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-04-25
2006-04-25
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S694000
Reexamination Certificate
active
07033941
ABSTRACT:
The present invention is related to a method for producing semiconductor devices from a semiconductor substrate, comprising providing a substrate having on its surface a number of elevated areas separated by areas which are at a lower level. Each elevated area has at its top surface a first layer of a material which is resistant to Chemical Mechanical Polishing (CMP). The method further comprises depositing a layer of a dielectric on top of the whole of said substrate, thereby filling the gaps between said elevated areas. The method further comprises depositing a second layer of a material which is resistant to CMP on top of the whole of said substrate. The method further comprises removing parts of the second CMP resistant layer and of dielectric layer. The method further comprises performing a CMP step and terminating the CMP step at the location of said first and second CMP resistant layers.
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Chen Kin-Chan
Interuniversitair Microelektronica Centrum (IMEC)
Knobbe Martens Olson & Bear LLP
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