Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-03-21
2006-03-21
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000
Reexamination Certificate
active
07015505
ABSTRACT:
In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.
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Adachi Hiroki
Arai Yasuyuki
Asami Taketomi
Hayakawa Masahiko
Kawasaki Ritsuko
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Thien F.
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