Method of and structure for controlling electrode temperature

Details Method of and structure for controlling electrode temperature Method of and structure for controlling electrode temperature

2006-07-11

2006-07-11

Paschall, Mark (Department: 3742)

Electric heating

Metal heating

By arc

C219S121430, C156S345470, C156S345270, C118S7230IR

Reexamination Certificate

active

07075031

ABSTRACT:
A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

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