PCRAM memory cell and method of making same

Details PCRAM memory cell and method of making same PCRAM memory cell and method of making same

2006-09-05

2006-09-05

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S200000

Reexamination Certificate

active

07102150

ABSTRACT:
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.

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