Method of etching or removing W and WSi.sub.x films

Details Method of etching or removing W and WSi.sub.x films Method of etching or removing W and WSi.sub.x films

1995-11-30

1997-04-15

Tung, T.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 72, 216 75, 216 79, 216 67, 252 791, 438721, 438905, H01L 2102

Patent

active

056206151

ABSTRACT:
The present invention teaches a method for etching or removing a tungsten (W) film and a tungsten silicide (WSi.sub.x) film during a semiconductor fabrication process, by the steps of: removing any exposed portions of the W or WSi.sub.x film by presenting an etchant chemistry comprising NF.sub.3 and HeO.sub.2 to these exposed portions at a temperature ranging from -20.degree. C. to 100.degree. C. The etchant chemistry is also effective for dry cleaning a deposition chamber by removing previously deposited films of W or WSi.sub.x.

REFERENCES:
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5382316 (1995-01-01), Hill et al.
patent: 5387312 (1995-02-01), Keller et al.
patent: 5413669 (1995-05-01), Fujita
patent: 5413670 (1995-05-01), Langan et al.
patent: 5492597 (1996-02-01), Keller

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