Modulating ion beam current

Details Modulating ion beam current Modulating ion beam current

2006-01-31

2006-01-31

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S492200

Reexamination Certificate

active

06992308

ABSTRACT:
The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.

REFERENCES:
patent: 4234797 (1980-11-01), Ryding
patent: 4290012 (1981-09-01), Berte et al.
patent: 4847504 (1989-07-01), Aitken
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5091655 (1992-02-01), Dykstra et al.
patent: 5130552 (1992-07-01), Bright et al.
patent: 5306921 (1994-04-01), Tanaka et al.
patent: 5420415 (1995-05-01), Trueira
patent: 5661308 (1997-08-01), Benveniste et al.
patent: 5834786 (1998-11-01), White et al.
patent: 5969366 (1999-10-01), England et al.
patent: 6452338 (2002-09-01), Horsky
patent: 6635880 (2003-10-01), Renau
patent: 6635889 (2003-10-01), Tsukihara et al.
patent: 6661016 (2003-12-01), Berrian
patent: 2001/0054698 (2001-12-01), Berrian
patent: 2002/0053642 (2002-05-01), Berrian
patent: 2002/0070347 (2002-06-01), Bisson et al.
patent: 2002/0175296 (2002-11-01), Kimura et al.

Affiliated with

Also associated with

Rating

Modulating ion beam current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modulating ion beam current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modulating ion beam current will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3582467