Ultraviolet detector and manufacture method thereof

Details Ultraviolet detector and manufacture method thereof Ultraviolet detector and manufacture method thereof

2006-03-07

2006-03-07

Porta, David (Department: 2878)

Radiant energy

Invisible radiant energy responsive electric signalling

Ultraviolet light responsive means

C257S463000, C438S093000

Reexamination Certificate

active

07009185

ABSTRACT:
The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si+ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer. Finally, an annular and a circular metallic layer are formed between the P-type GaN layer and the first N-type GaN layer as well as inside the second N-type GaN layer, respectively, to serve for respective ohmic contact layers. The present invention is characterized in that an incident light can project upon a depletion layer of the GaN planar structure to have the detection efficiency significantly improved.

REFERENCES:
patent: 5923953 (1999-07-01), Goldenberg Barany et al.
patent: 6849862 (2005-02-01), Nikolaev et al.
Planar GaN n30-pphotodetectors formed by Si implantation intop-GaN J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G. Chen, G. C. Chi, S. J. Chang, Y. K. Su, and C. T. Lee Department of Physics, National Central University, Chung-Li 320, Taiwan, Republic of China (Received May 6, 2002; accepted Oct. 7, 2002).

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