Process for making polysilicon contacts to IC mesas

Details Process for making polysilicon contacts to IC mesas Process for making polysilicon contacts to IC mesas

1990-03-30

1991-05-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 33, 437 38, 437 41, 437 55, 437 64, 437 69, 437 79, 437162, 437191, 437193, 437984, 437985, H01L 21283, H01L 2131

Patent

active

050195239

ABSTRACT:
Disclosed is a process for making a bipolar transistor which comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.

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