Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2006-07-11
2006-07-11
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S766000
Reexamination Certificate
active
07075113
ABSTRACT:
A light-emitting device and method for fabricating the same are revealed. The light-emitting device includes an epitaxial structure, a P-type ohmic contact electrode and an N-type ohmic contact electrode. The epitaxial structure includes a plurality of epitaxial layers capable of emitting light and P-type contact layer. The P-type ohmic contact electrode includes a first nickel layer deposited on the epitaxial structure, a first platinum layer deposited on the first nickel layer, and a first gold layer deposited on the first platinum layer. According to the fabricating method of the light-emitting device, an epitaxial structure is first formed on the surface of a substrate, a P-type ohmic contact electrode is then formed on the epitaxial structure, and an N-type ohmic contact electrode is formed on the other surface of the substrate. Finally, an annealing process is performed at a temperature between 220° C. and 330° C.
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Atomic Energy Council - Institute of Nuclear Energy Research
Egbert Law Offices
Trinh (Vikki) Hoa B.
Weiss Howard
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