Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-05-09
2006-05-09
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S597000
Reexamination Certificate
active
07041604
ABSTRACT:
The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film defining an etch rate interface having a plurality of first portions that having a first etch rate associated therewith. The multi-layer film includes a second portion having a second etch rate associated therewith. Adjacent first portions are separated by the second portion. A pattern is transferred onto the substrate that is defined, in part, by the junction. The difference between the first and second etch rates is selected to minimize bowing of recessed features formed in the pattern.
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Miller Michael N.
Stacey Nicholas A.
Brooks Kenneth C.
Carter Michael D.
Dang Phuc T.
Molecular Imprints, Inc.
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