Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-07-11
2006-07-11
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S232000, C257S231000, C438S048000, C438S054000
Reexamination Certificate
active
07075129
ABSTRACT:
An image sensor includes a substrate of the first conductivity type; a channel of the first conductivity type that spans at least a portion of the substrate; a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and a connection to the well; wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate.
REFERENCES:
patent: 5286990 (1994-02-01), Hynecek
patent: 5438211 (1995-08-01), Nakamura et al.
patent: 5736756 (1998-04-01), Wakayama et al.
patent: 6049100 (2000-04-01), Kawai et al.
patent: 6150676 (2000-11-01), Sasaki
patent: 6338978 (2002-01-01), Moon
Parks et al., “Large Area Interline CCD With Low Dark Current,”Proceedings of the SPIE—The International Society For Optical Engineering SPIE-Int. Soc. Opt. Eng. USA, vol. 5017, 2003, pp. 167-175.
Eastman Kodak Company
Flynn Nathan J.
Watkins Peyton C.
Wilson Scott R.
LandOfFree
Image sensor with reduced p-well conductivity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Image sensor with reduced p-well conductivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor with reduced p-well conductivity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3579980