Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2006-03-21

2006-03-21

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185210, C365S185330

Reexamination Certificate

active

07016230

ABSTRACT:
A non-volatile semiconductor memory device including a memory cell array with electrically rewritable and non-volatile memory cells arranged therein, and a sense amplifier circuit for reading said memory cell array, wherein the sense amplifier circuit includes: a first transistor disposed between a bit line of the memory cell array and a sense node to serve for sensing bit line data, the first transistor being driven by a voltage generating circuit including a boost circuit to transfer a bit line voltage determined in response to data of a selected memory cell to the sense node; a second transistor coupled to the sense node for precharging the sense node prior to bit line data sensing; a data latch for judging a transferred bit line voltage level to store a sensed data therein; and a capacitor for boosting the sense node, one end thereof being connected to the sense node, the other end thereof being selectively driven by a boost-use voltage.

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patent: 2001-167590 (2001-06-01), None

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