Method for the manufacture of optical semiconductor device

Details Method for the manufacture of optical semiconductor device Method for the manufacture of optical semiconductor device

1989-02-28

1991-05-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 5, 437129, 437130, 437155, 437247, 357 19, 148DIG84, H01L 21265

Patent

active

050195190

ABSTRACT:
An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.

REFERENCES:
patent: 3959038 (1976-05-01), Gutierrez et al.
patent: 4213808 (1980-07-01), Thompson et al.
patent: 4476563 (1984-10-01), Ruyven
patent: 4679305 (1967-07-01), Morizuka
patent: 4731340 (1988-05-01), Chang et al.
patent: 4811352 (1989-03-01), Suzuki et al.

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