Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-09-05

2006-09-05

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C349S046000, C438S158000, C257SE27131, C257SE27152

Reexamination Certificate

active

07102165

ABSTRACT:
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.

REFERENCES:
patent: 4624737 (1986-11-01), Shimbo
patent: 4960719 (1990-10-01), Tanaka et al.
patent: 5028551 (1991-07-01), Dohjo et al.
patent: 5084961 (1992-02-01), Yoshikawa
patent: 5151806 (1992-09-01), Kawamoto et al.
patent: 5261156 (1993-11-01), Mase et al.
patent: 5362660 (1994-11-01), Kwasnick et al.
patent: 5478766 (1995-12-01), Park et al.
patent: 5532180 (1996-07-01), den Boer et al.
patent: 5539219 (1996-07-01), den Boer et al.
patent: 5583675 (1996-12-01), Yamada et al.
patent: 5668379 (1997-09-01), Ono et al.
patent: 5668651 (1997-09-01), Yamada et al.
patent: 5706064 (1998-01-01), Fukunaga et al.
patent: 5739880 (1998-04-01), Suzuki et al.
patent: 5757453 (1998-05-01), Shin et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5766977 (1998-06-01), Yamazaki
patent: 5798812 (1998-08-01), Nishiki et al.
patent: 5811318 (1998-09-01), Kweon
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5825449 (1998-10-01), Shin
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 5847687 (1998-12-01), Hirakata et al.
patent: 5867233 (1999-02-01), Tanaka
patent: 5892562 (1999-04-01), Yamazaki et al.
patent: 5917564 (1999-06-01), Kim et al.
patent: 5917567 (1999-06-01), Oh et al.
patent: 5942767 (1999-08-01), Na et al.
patent: 5959599 (1999-09-01), Hirakata
patent: 5966189 (1999-10-01), Matsuo
patent: 5977562 (1999-11-01), Hirakata et al.
patent: 5986724 (1999-11-01), Akiyama et al.
patent: 5990998 (1999-11-01), Park et al.
patent: 5994721 (1999-11-01), Zhong et al.
patent: 5995190 (1999-11-01), Nagae et al.
patent: 5998229 (1999-12-01), Lyu et al.
patent: 6008869 (1999-12-01), Oana et al.
patent: 6025892 (2000-02-01), Kawai et al.
patent: 6055028 (2000-04-01), Nishi et al.
patent: 6064456 (2000-05-01), Taniguchi et al.
patent: 6072557 (2000-06-01), Kishimoto
patent: 6075257 (2000-06-01), Song
patent: 6097458 (2000-08-01), Tsuda et al.
patent: 6097459 (2000-08-01), Shimada et al.
patent: 6097465 (2000-08-01), Hiroki et al.
patent: 6114184 (2000-09-01), Matsumoto et al.
patent: 6118502 (2000-09-01), Yamazaki et al.
patent: 6124606 (2000-09-01), den Boer et al.
patent: 6130729 (2000-10-01), Oh et al.
patent: 6153893 (2000-11-01), Inoue et al.
patent: 6160600 (2000-12-01), Yamazaki et al.
patent: 6184946 (2001-02-01), Ando et al.
patent: 6188452 (2001-02-01), Kim et al.
patent: 6190933 (2001-02-01), Simabukuro et al.
patent: 6197625 (2001-03-01), Choi
patent: 6208390 (2001-03-01), Ejiri et al.
patent: 6208395 (2001-03-01), Kanoh et al.
patent: 6218221 (2001-04-01), Sah
patent: 6255668 (2001-07-01), Kang et al.
patent: 6266117 (2001-07-01), Yanagawa et al.
patent: 6266121 (2001-07-01), Shigeta et al.
patent: 6271903 (2001-08-01), Shin et al.
patent: 6304243 (2001-10-01), Kondo et al.
patent: 6317187 (2001-11-01), Nakajima et al.
patent: 6323051 (2001-11-01), Shimada
patent: 6331881 (2001-12-01), Hatano et al.
patent: 6339462 (2002-01-01), Kishimoto et al.
patent: 6359672 (2002-03-01), Gu et al.
patent: 6387737 (2002-05-01), Yamazaki et al.
patent: 6583065 (2003-06-01), Williams et al.
patent: 6624864 (2003-09-01), Kubo et al.
patent: 6671025 (2003-12-01), Ikeda et al.
patent: 6709901 (2004-03-01), Yamazaki et al.
patent: 6747288 (2004-06-01), Yamazaki et al.
patent: 6806495 (2004-10-01), Yamazaki et al.
patent: 6855957 (2005-02-01), Yamazaki et al.
patent: 2002/0145602 (2002-10-01), Matsueda
patent: 2002/0171085 (2002-11-01), Suzawa et al.
patent: 2003/0058210 (2003-03-01), Yamazaki et al.
patent: 05-323371 (1993-12-01), None
patent: 07-014880 (1995-01-01), None
patent: 09-015621 (1997-01-01), None
patent: 09-054318 (1997-02-01), None
patent: 09-152626 (1997-06-01), None
patent: 11-109372 (1999-04-01), None
patent: 11-160734 (1999-06-01), None
patent: 11-202368 (1999-07-01), None
patent: 11-258596 (1999-09-01), None
patent: 2001-085698 (2001-03-01), None
patent: 2001-250953 (2001-09-01), None
patent: 2001-255560 (2001-09-01), None
patent: 2001-257359 (2001-09-01), None
patent: 2001-264804 (2001-09-01), None
patent: 2001-264807 (2001-09-01), None
patent: 2001-318626 (2001-11-01), None
Wolf and Tauber, “Silicon Processing for the VLSI Era Volume 1: Process Technology,” pp. 161-175, 335, Lattice Press, 1986.
Specification, claims, abstract and drawings of U.S. Appl. No. 09/635,945, filed Aug. 10, 2000.
S. Wolf et al.,Silicon Processing for the VSLI Era, vol. 1, pp. 171-173, Jan. 1, 1986.
Specification, claims, abstract, and pending claims of U.S. Appl. No. 09/566,729, filed May 9, 2000 to Yamazaki et al.
Specification, claims, abstract, and pending claims of U.S. Appl. No. 09/566,742, filed Jul. 7, 2000 to Yamazaki et al.

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