Method for evaluating lithography process margins

Details Method for evaluating lithography process margins Method for evaluating lithography process margins

2006-01-17

2006-01-17

Picard, Leo (Department: 2125)

Data processing: generic control systems or specific application

Specific application, apparatus or process

Product assembly or manufacturing

C716S030000, C716S030000

Reexamination Certificate

active

06988016

ABSTRACT:
Setting values of a light exposure and a focus position are set in an exposure process for forming a pattern on a substrate. Pseudo measured dimensions of the pattern are calculated with respect to each of the combinations of the setting values. ED-trees and a plurality of margin curves are calculated based on the pseudo measured dimensions with respect to each of the combinations. A dispersion of a tolerance of the light exposure of the margin curves is calculated at a depth of focus corresponding to a maximum difference in height of the substrate.

REFERENCES:
patent: 5303002 (1994-04-01), Yan
patent: 6004701 (1999-12-01), Uno et al.
patent: 6100515 (2000-08-01), Nishi et al.
patent: 6610460 (2003-08-01), Komatsu et al.
patent: 6760892 (2004-07-01), Taoka et al.
patent: 2002/0188925 (2002-12-01), Higashi
patent: 2-224319 (1990-09-01), None
patent: 10-199787 (1998-07-01), None
Wong et al—“The Mask Error Factor in Optical Lithography”—IEEE Transactions on Semiconductor Manufacturing, May 2000, vol. 13 Issue 2.
Miwa et al—“A new method for calculating one-dimensional process margin in consideration of process variations”—4th International Workshop on Statistical Metrology, Jun. 12, 1999.

Affiliated with

Also associated with

Rating

Method for evaluating lithography process margins does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for evaluating lithography process margins, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for evaluating lithography process margins will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3576639