Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-05-23

2006-05-23

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S211000, C438S706000

Reexamination Certificate

active

07049236

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. A gate electrode, which was formed through existing mask and etch processes, is formed by forming an oxide film protrusion on a field oxide film and forming the gate electrode between the oxide film protrusions. It is thus possible to minimize the critical dimension of the device, easily adjust the size of the device and form a uniform gate electrode over the wafer.

REFERENCES:
patent: 6200856 (2001-03-01), Chen
patent: 6242303 (2001-06-01), Wang et al.
patent: 6461915 (2002-10-01), Rudeck
patent: 2001-284556 (2001-10-01), None

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