Semiconductor device using a nitride semiconductor

Details Semiconductor device using a nitride semiconductor Semiconductor device using a nitride semiconductor

2006-05-02

2006-05-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S020000, C257S024000, C257S103000, C257S189000, C257S194000

Reexamination Certificate

active

07038252

ABSTRACT:
A semiconductor device includes: a first semiconductor layer represented by a composition formula AlxGa1-xN (0≦x≦1) a first conductivity type or non-doped second semiconductor layer represented by a composition formula AlyGa1-yN (0≦y≦1, x<y) and formed on the first semiconductor layer; a second conductivity type third semiconductor layer represented by a composition formula AlxGa1-xN (0≦x≦1) and selectively formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; a source electrode electrically connected to the second semiconductor layer; and a drain electrode electrically connected to the second semiconductor layer. The distance between the drain electrode and the third semiconductor layer is longer than the distance between the source electrode and the third semiconductor layer.

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X. Hu, et al., Electronics Letters, vol. 36, No. 8, pp. 753-754, “Enhancement Mode AlGaN/GaN HFET With Selectively Grown PN Junction Gate”, Apr. 13, 2000.
R. Coffie, et al., IEEE Electron Device Letters, vol. 23, No. 10, pp. 588-590, “p-Capped GaN-AlGaN-GaN High-Electron Mobility Transistors (HEMTs)”, Oct. 2002.

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