Thin film transistor liquid crystal display and fabrication...

Details Thin film transistor liquid crystal display and fabrication... Thin film transistor liquid crystal display and fabrication...

2006-09-26

2006-09-26

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S149000, C438S157000, C349S113000

Reexamination Certificate

active

07112459

ABSTRACT:
A thin film transistor liquid crystal display (TFT-LCD) and fabrication method thereof. The fabrication method includes depositing a first metal layer on a transparent substrate, patterning the first metal layer to form at least two adjacent gate electrodes, forming a gate insulating layer on the gate electrodes, forming a semiconductor layer on the insulating layer, patterning the semiconductor layer into a predetermined shape, depositing a second metal layer on the transparent substrate, patterning the second metal layer to form a source/drain electrode layer, and depositing an insulating layer on the transparent substrate. A contact hole is defined via the insulating layer, source/drain electrode layer, and gate insulating layer, exposing a part of the surface of transparent substrate between the adjacent gate electrodes. A transparent conductive layer is deposited on the transparent substrate, and a light-shielding matrix is formed directly above the contact hole.

REFERENCES:
patent: 6639639 (2003-10-01), Baek et al.
patent: 6654076 (2003-11-01), Ha et al.
patent: 6734463 (2004-05-01), Ishikawa

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