Method and apparatus for evaluating semiconductor device

Details Method and apparatus for evaluating semiconductor device Method and apparatus for evaluating semiconductor device

2006-09-12

2006-09-12

Patel, Paresh (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

Reexamination Certificate

active

07106087

ABSTRACT:
Gate voltage sweeping is performed on a semiconductor element using a multilayer insulating film including a lower insulating film whose thickness is to be obtained. A low voltage peak current mode is extracted from the resultant current-voltage characteristic, so that a peak voltage and a peak current amount in this mode are obtained. The thickness of the lower insulating film is obtained based on the obtained peak voltage or peak current amount and a previously-obtained correlation between the peak voltage or peak current amount and the thickness of the lower insulating film.

REFERENCES:
patent: 6633177 (2003-10-01), Okada
Koyama et al; “Degradation Mechanism of HfSiON Gate Insulator and Effect of Nitrogen Composition on the Statistical Distribution of the Breakdown”IEEE;c. 2003; pp. 931-934; Japan.
Okada et al.; “Degradation Mechanism of HfAIO/SiO Stacked Gate Dielectric Films Through Transient and Steady State Leakage Current Analysis”;Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials;c. 2004; pp. 76-77; Tokyo.

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