Data processing: structural design – modeling – simulation – and em – Modeling by mathematical expression
Reexamination Certificate
2006-05-02
2006-05-02
Phan, Thai (Department: 2128)
Data processing: structural design, modeling, simulation, and em
Modeling by mathematical expression
C703S014000, C324S762010, C438S014000
Reexamination Certificate
active
07039566
ABSTRACT:
A hot carrier lifetime of a MOS transistor is estimated, depending on model formulas: 1/τ=1/τ0+1/τb; τb∝1sub−mb·Idmb−2·exp(a/|Vbs|), where τ denotes a lifetime, Isubdenotes a substrate current, Iddenotes a drain current, Vbsdenotes a substrate voltage, τ0denotes a lifetime at the time the substrate voltage Vbs=0, τbdenotes a quantity representing deterioration of a lifetime at the time the substrate voltage |Vbs|>0, and mb and ‘a’ are model parameters. Furthermore, a parameter Age representing a cumulative stress quantity is calculated depending on model formulas: Age=Age0+Ageb; Ageb=∫1/Hb[Isubmb·Id2−m]·exp(−a/|Vbs|)dt, where t denotes time, Hbis a model parameter, Age0denotes a parameter representing a cumulative stress quantity at the time the substrate voltage Vbs=0, and Agebsdenotes a quantity representing an increase of the cumulative stress quantity at the time the substrate voltage at |Vbs|>0. Thereby, a lifetime in actual use is determined with accuracy even when a substrate voltage is applied, and circuit characteristic degradation is simulated with high accuracy.
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Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
Phan Thai
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